The pressure dependent rate constant for the reaction, SiH
4(g)→SiH
3(g)+H, has been unknown from the standpoints of both experiment and calculation. It is the basic data of the reaction path analysis for RPT (Reduced Pressure Thermal)-CVD from silane, and hence it is a valuable piece of information in science and technology in view of the reaction control. In this study, the pressure dependent rate constant was predicted using the RRKM theory aided by Ab-initio MO. It was calculated under conditions in which the temperatures were from 600 to 1500 K at intervals of 100 K, the pressures were 133.32×10
10, 133.32×10
8, 133.32×10
6, 133.32×10
4, 101.32×10
3, 133.32×10
2, 133.32×10
1, 133.32×10
0, 133.32×10
−1, 133.32×10
−2 and 133.32×10
−3(Pa), and the third body was argon gas. The Arrhenius type rate expression was shown as follows:
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\
oindentHere, the subscript of
k stands for the pressure.
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