DENSHI SHASHIN GAKKAISHI (Electrophotography)
Online ISSN : 1880-5108
Print ISSN : 0387-916X
ISSN-L : 0387-916X
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Volume 28, Issue 3
Displaying 1-10 of 10 articles from this issue
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  • PACS: Technical Perspective in the Future
    Tetsuo OKABE
    1989 Volume 28 Issue 3 Pages 247-254
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.247
    JOURNAL FREE ACCESS
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  • Annealing Effect on Sputtered a-Si:H Films
    Mitsuru OIKAWA, Masao OHTSUKA, Takashi KIKUCHI, Masanobu OGUCHI
    1989 Volume 28 Issue 3 Pages 255-263
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.255
    JOURNAL FREE ACCESS
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    The characteristics of hydrogenated amorphous silicon film, which has undergone the annealing treatment, changes with time due to the variation of distributions of defects or traps or due to the decrease of hydrogen content, and it is conceived that the trend of the characteristic change depends largely upon the network structure of amorphous silicon or the modes of the Si-H bond.
    In order to verify these respects, in the experiment various films prepared under different sputtered conditions, were annealed from 150 to 350°C with 50°C steps and the characteristic change due to accumulated effect from various causes was observed.
    In films treated in the early stage of annealing the content of hydrogen and the width of the optical band gap decreases gradually. This tendency is more remarkable as substrate temperature is lower, because of the exhaust of unstable hydrogen due to annealing gives a larger effect to substrate with low temperature.
    From the measurements of the change in the electric and optical characteristics during heating process, it was observed that the effects of annealing treatment depend not only upon intrinsic properties of the films or the structure of films but also upon the reconfigurations of defects and traps in the middle stage near substrate temperature, the increase of the dangling bond and the rapid increase of localized level arising from almost complete exhausted of hydrogen in the last stage of annealing treatment.
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  • A Study on Deep Gap States in a-As2Se3 by Xerographic Spectroscopy
    Hiroyoshi NAITO, Mitsuru NARITA, Toshiyuki IIJIMA, Yasuo NAKAURA, Masa ...
    1989 Volume 28 Issue 3 Pages 264-268
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.264
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    The distribution of the gap-state in amorphous As2Se3 thin films have been investigated with xerographic spectroscopy. Dependence of the measured gap-state distributions on the xerographic cycling and the composition of amorphous As:Se thin fims is examined to elucidate the characteristics and the origin of the gap states. The gap states are found to be distributed over the energy range from 0.70 to 0.88 eV above the valence-band edge with five distinct levels. The five levels are also observed in As:Se this films in the composition range from 33.7 to 40.0 atomic% As, the energy positions of which are essentially the same as in amorphous As2Se3
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  • Effects of Purification of Phthalocyanine Pigment on an Electrophotographic Properties of Pigment Dispersion-Based Photoreceptor
    Takashi KITAMURA, Naofumi UEDA
    1989 Volume 28 Issue 3 Pages 269-273
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.269
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    The effects of purification of metal-free phthalocyanine pigment uniformly dispersed in polymer matrix on the electrophotographic properties of photoreceptor have been studied. Metal-free phthalocyanine was purified by a simple sublimation technique. The photoreceptor containing of the pure phthalocyanine pigments exhibited the high charge acceptance and the high photosensitivity under the positive corona charging. The carrier generation effciency was increased rapidly by the once time of purification, and then decreased with number of repeating Purification of phthalocymine pigment. The effects of purification on the electrophotographic sensitivity of metal-free phthalocyanine-polymer photoreceptor is deduced to be explained by a convolution of the carrier generation and transport efficiencies by the purification of phthalocyanine pigment.
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  • Novel Color Electrophotography by “ One Drum Color Superimposing Process ”
    Hajime YAMAMOTO, Yuji TAKASHIMA, Hidenori KUNISHIGE, Toshi SAITOH
    1989 Volume 28 Issue 3 Pages 284-290
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.284
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    Full-color image is directly formed on the photoconductor by repetitional cycles of charging, exposing and developing of yellow, magenta and cyan toners. Each image is superimposed onto the preceding toner image on the photoconductor.
    Main technical points are as follows:
    1) To make the naked area and the toner-covered area of the photoconductor equal surface potentia1, a scorotron charger is employed.
    2) To make succeeding latent image under the preceding toner image, the choice of the light source and the developing order of three component colors are important. As for the light emitting diode, the developing order of Y —> M —> C makes the excellent color reproduction.
    3) To avoid color contamination, non-contact toner flying development is used under D.C. electric field.
    By this process, 8 prints A4 per minute can be obtained. In this color process, conventionally employed image-transfer-drum is excluded. So this novel color process has the good capability to make color electrophotographic printer smaller.
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  • A Contact Color lmage Sensor using Bipolar IC and its Peripheral Circuits
    Yasunori YAMAMOTO, Yasushi AYAKI
    1989 Volume 28 Issue 3 Pages 292-298
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.292
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  • Amorphous Silicon TFT Driven Image Sensor which enables High Speed and High Quality Image Reading
    Takashi OZAWA
    1989 Volume 28 Issue 3 Pages 299-305
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.299
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    a-Si:H contact type image sensor has been applied to low cost facsimiles so far. As for the TFT sensor, capabilities for high speed and high image quality are investigated. By the investigations regarding photo response of the photosensitive element, charge transfer characteristics of TFTs, resolution capability and gray scale capability, 400 DPI, 256 gray scale and 0.5 ms/line scanning speed can be attained by this sensor.
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  • Thermal Head
    Kenzo TSUJI
    1989 Volume 28 Issue 3 Pages 311-314
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.311
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  • Fabrication of Amorphous Silicon Photoreceptor. (1)
    — Kinetics of Glow-Discharge Decomposition of SiH4 and Related Reactive Gases —
    Tatsuo NAKANISHI, Yuuji MARUKAWA, Satoshi TAKAHASHI, Toshinori YAMAZAK ...
    1989 Volume 28 Issue 3 Pages 274-283
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.274
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    Decomposition efficiencies (η) of SiH4 and the related source gases X have been measured by mass spectrometry in SiH4-X-Ar glow-discharge plasma, and the relative rate constants for dissociation reaction of the gases X to SiH4 (Kd,x/Kd,SiH4) have been determined, where X are Si2H6, GeH4, C2H2, NH3, CH4, CO2, CF4 and SiF4. Using these kinetic data obtained, incorporation process of carbon-source species into a-SiC:H films and resultant carbon contents [C] in the films have been discussed for SiH4, CH4 and C2H2 as material gases. Furthermore, a-Si:H/a-SiC:H doublelayered photoreceptors have been fabricated under controlling ηSiH4 and ηCH4in SiH4-CH4-Ar glow-discharge plasma and their electrophotographic properties have been presented.
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  • Improvements on Liquid-Crystal Shutter Array by Thin Film Driver Integration
    Fujio OKUMURA
    1989 Volume 28 Issue 3 Pages 306-310
    Published: 1989
    Released on J-STAGE: March 18, 2008
    DOIhttps://doi.org/10.11370/isjepj.28.306
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    This paper describes the printing quality improvements on a ferroelectric liquid-crystal shutter array (LCSA) by thin film driver integration. A poly-Si thin film transistor (TFT )driver and an a-Si:H TFT driver were integrated and tested to confirm the validity of this device. In the conventional multiplex addresed LCSA, a low contrast ratio and a large number of interconnections limited the rapid exploitation of this device. On the other hand, the LCSA with thin film driver offers the advantage of contrast ratio that is much higher than that of multiplex addressed LCSA (over 20 for LCSA with thin film driver versus less than 10 for multiplex addressed LCSA). A large number of interconnections and driver ICs are no longer required, since the connection lines between liquid-crystal cells and driver are patterned by photolithography. This results in high density and compact device size. Moreover, the bistable opto-electric effect, which is very important for multiplex address and is very sensitive to the surface treatment of aligning treatment layer, is not required. This results in high reliability and high productivity. In conclusion, integrating a thin film driver on a LCSA is the best way to obtain a good quality printing image.
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