It has been found that the photosensitivity of amorphous silicon (a-Si) photoreceptor fabricated by glow-discharge decomposition of (SiH
4-B
2H6-Ar) has specific relation to the peak-to-peak value of
Rf Voltage (
Vp-p) and the DC bias voltage (
VDC) on the
Rf powered-electrode. Namely, the lower the
Vp-p value is depressed, the higher the photosensitivity is improved. Dependences of the
Vp-p value on deposition parameters of a-Si:H (B) film such as gas pressure (P) , distance between
Rf powered-electrode and aluminum substrate (
l),
Rf electric power (
Rf), and dilution ratio of SiH
4 to Ar (F
SiH4/F
Ar) seem to indicate correlation of
Vp-p with electron energy and electron density in the plasma.
Furthermore, the
Vp-p and
VDC Values have been measured in the plasmas of He, Ne (rare-gases with no Ramsauer effect), Ar, Kr, Xe (rare-gases with Ramsauer effect), and H
2, N
2, CH
4, SiH
4 (molecular-gases). Interesting behaviors in
Vp-p and
VDC Seem to have correlation with collision cross sections (σ) of electrons (with the energy of 2-10 eV) in these gases.
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