抄録
The technology of solid phase growth of multilayer structures with buried nanosize magnesium silicide clusters has been developed. Basing on the experimental data, a conclusion was made that magnesium silicide clusters remain in depth of the Si layers at 650°C and give a contribution in the effective dielectric permeability and effective electron number of multilayer structures. The huge increase of a thermoelectric power coefficient for samples with buried magnesium silicide clusters in comparing with one for the bare p-type silicon substrate has been observed. [DOI: 10.1380/ejssnt.2005.12]
