Determination of Band Structures of InN/GaN Interfaces by Synchrotron Radiation Hard X-ray Photoemission Spectroscopy

抄録

We have determined the valence band discontinuities of InN/Mg:GaN and InN/Si:GaN heterostructures by hard x-ray photoemission spectroscopy. InN thin films were grown by pulsed laser deposition method and streaky high-energy electron diffraction pattern was observed, indicating that good crystalline InN films were grown. The value of valence band discontinuity for InN/Mg:GaN is as small as 0.3 eV, while that for InN/Si:GaN is 1.4 eV. The fact that the InN/Mg:GaN interface has the small energy barrier suggests that InN is very promising for the interlayer between transparent conductive layers and Mg:GaN in light emitting diode structures. [DOI: 10.1380/ejssnt.2008.254]