IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors
Hideki YagiTakuya SanoKoji MiuraDhanorm PlumwongrotKazuya OhiraTakeo MaruyamaShigehisa Arai
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2004 Volume 1 Issue 17 Pages 540-544

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Abstract

GaInAsP/InP strain-compensated multiple-quantum-wire lasers (wire widths of 19nm and 27nm in a period of 100nm) with SiO2/semiconductor reflectors were realized by electron-beam lithography, CH4/H2 reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes. As a result, the threshold current densities of these quantum-wire lasers were lower than those of quantum-film lasers prepared on the same initial wafer and oscillations from the transition between the ground levels were observed at room temperature.

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© 2004 by The Institute of Electronics, Information and Communication Engineers
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