Abstract
The degree of leaning of the Electro-Static Discharge (ESD) wave form (hereinafter referred as RON) of ESD protection parameters is closely related to the internal core circuit damage. Accurate measurement of RON requires stable short calibration with Transmission Line Pulse (TLP). In particular, for the high-precision ESD design of the thin gate oxide transistor in the most advanced technology, the high accuracy RON measurement of TLP is required. During short calibration, we found the contact resistance between the packaged sample and integrated circuit (IC) socket varied depending on the calibration current. Scanning Electron Microscope (SEM) analysis of contacts made it clear.
