Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin; Gwang-Geun Lee; Dae-Hee Han; Seung-Pil Han; Eisuke Tokumitsu; Shun-Ichiro Ohmi; Dong-Joo Kim; Hiroshi Ishiwara; Minseo Park; Seung-Hyun Kim; Wan-Gyu Lee; Yun Jeong Hwang; Byung-Eun Park

doi:10.1587/elex.11.20140447

LETTER

Experimental demonstration of a ferroelectric FET using paper substrate

Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun-Ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park

Author information

Changhwan Shin
School of Electrical and Computer Engineering, University of Seoul
Gwang-Geun Lee
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Dae-Hee Han
School of Electrical and Computer Engineering, University of Seoul
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Seung-Pil Han
Department of Biomolecular Engineering, Tokyo Institute of Technology
Eisuke Tokumitsu
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Shun-Ichiro Ohmi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Dong-Joo Kim
Materials Research and Education Center, Auburn University
Hiroshi Ishiwara
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Department of Physics, Konkuk University
Minseo Park
Department of Physics, Auburn University
Seung-Hyun Kim
School of Engineering, Brown University
Wan-Gyu Lee
Department of Nano CMOS, National NanoFab Center
Yun Jeong Hwang
Clean Energy Research Center, Korea Institute of Science and Technology
Byung-Eun Park
School of Electrical and Computer Engineering, University of Seoul
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Materials Research and Education Center, Auburn University

Keywords: ferroelectric transistor, paper substrate, P(VDF-TrFE), P3HT

JOURNAL FREE ACCESS

2014 Volume 11 Issue 14 Pages 20140447

DOI https://doi.org/10.1587/elex.11.20140447

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Abstract

A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (V_TH) window of ∼20 V for the transistor on paper. An on/off current ratio of ∼10² is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

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