Abstract
The electrical performances of high-speed three dimensional integrated circuits (3-D ICs) are affected by temperature due to large integration densities, which may seriously affect the modeling and limit the reliability of circuits. In this letter, the parasitic resistance of through-silicon via (TSV) including temperature effect is studied. With the consideration of skin effect, Temperature Coefficient of Resistance (TCR) is introduced to evaluate the sensitivity of TSV resistance to temperature changes. It can be found that the sensitivity of TSV resistance to temperature changes significantly both with the frequency and radius of TSV. The expression of TCR can be simplified to the one obtained by neglecting the skin effect, which shows better applicability.
