Abstract
A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring separated freewheeling diode (FWD) and IGBT is proposed. The proposed RC-IGBT with two kinds of anti-paralleled FWDs (PIN and MPS diode) is discussed. The simulation show that the integrated Merged P-i-N/Schottky (MPS) diode can improve the property of the reverse conduction and reverse recovery greatly than the PIN diode, the reason is that a new mechanism is adopted by the Schottky contact of the MPS diode. As the results indicate that the RC-IGBT with MPS diode achieves lower VR and JPR when compared to the PIN diode.
