IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
A 1.2 GSps, 8 bit RF DAC for multi-Nyquist applications in GaAs technology
Yi ZhangXiaopeng LiYoutao ZhangQingguo YeYing ZhangYufeng GuoHao Gao
著者情報
キーワード: DAC, multi-Nyquist, RF, GaAs
ジャーナル フリー

2018 年 15 巻 20 号 p. 20180773

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High-speed digital-to-analog converter (DAC) is key component in instrument and automatic test equipment, radar and ultra-wideband (UWB) systems. In this paper, a two-channel 1.2 GSps, 8 bit RF DAC for Multi-Nyquist applications in 1 µm GaAs Technology is presented. Combining mode select circuit with synchronous latch simplifies design of the current source and layout of DAC core circuit. Measurement results demonstrate that the Differential Nonlinearity (DNL) is within ±0.15 LSB, and the Integral Nonlinearity (INL) is within ±0.4 LSB. For the normal mode, the Spurious Free Dynamic range (SFDR) is larger than 40 dB; for the mixing mode, output bandwidth is up to 1.8 GHz, and the SFDR is larger than 30 dB. Under a supply voltage of 5 Volts, the output swing is 1.1 Vpp, and the total power consumption is 1.7 Walts for both channels working.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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