IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
LETTER
An improved noise immune level-shifter via IGBT gate-emitter voltage detection
Hongyue ZhuDawei XuXinchang LiChao XuDengpeng WuXinhong ChengXiaoYun Li
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2018 Volume 15 Issue 9 Pages 20180293

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Abstract

In this paper, a noise rejection circuit for level-shift gate drive ICs is proposed. This circuit is composed of a detection module and a pull down module with good process matching robustness and low circuit complexity. The dv/dt noise is removed by monitoring the interval of the IGBT gate-emitter voltage variation and locking the output logic in the period of the dv/dt noise comes. Spectre simulation has been performed with a 700 V 0.6 um BCD process model to verify the performance of the proposed noise rejection circuit which shows a full removal of 80 V/ns dv/dt noise and only 15 ns increasing in propagation delay time.

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© 2018 by The Institute of Electronics, Information and Communication Engineers
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