Analysis and modeling for MOSFET degradation under RF stress

抄録

The degradation of NMOSFETs due to hot-carrier effects under DC and RF stress was studied experimentally. The experimental results indicate that DC stress leads to more serious performance degradation than RF stress. It has also been found that channel length and width can change the worst DC stress condition. Moreover, RF performance degradation can be explained by DC performance degradation. A new model is proposed to predict the degradation characteristics of devices under RF stress by the degradation under DC stress. By using knowledge-based neural network (KBNN), the model shows good accuracy. It can also reduce test data set and simplify testing process.