IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
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Angle-sensitive pixel based on silicon-on-insulator p-n junction photodiode with aluminum grating gate electrode
Hiroaki SatohKen KawakuboAtsushi OnoHiroshi Inokawa
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2022 Volume 19 Issue 21 Pages 20220428

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Abstract

Angle-sensitive pixel (ASP) made of silicon-on-insulator (SOI) p-n junction photodiode (PD) and aluminum (Al) line-and-space (L/S) grating gate electrode is proposed, and the incident angle dependence of spectroscopic quantum efficiency (QE) in visible light range are evaluated experimentally. Good agreement between measured peak wavelengths and theoretical ones was successfully obtained for various grating periods and two linearly-polarized lights. The proposed ASP would contribute to the advanced imaging with incident angle information.

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© 2022 by The Institute of Electronics, Information and Communication Engineers
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