Angle-sensitive pixel based on silicon-on-insulator p-n junction photodiode with aluminum grating gate electrode

Abstract

Angle-sensitive pixel (ASP) made of silicon-on-insulator (SOI) p-n junction photodiode (PD) and aluminum (Al) line-and-space (L/S) grating gate electrode is proposed, and the incident angle dependence of spectroscopic quantum efficiency (QE) in visible light range are evaluated experimentally. Good agreement between measured peak wavelengths and theoretical ones was successfully obtained for various grating periods and two linearly-polarized lights. The proposed ASP would contribute to the advanced imaging with incident angle information.