Single event effect mechanism study in 130nm fully depleted SOI technology devices

Rui Chen; Ziyu Wang; Sai Li; Jianwei Han; Yanan Liang; Qian Chen; Shipeng Shangguan; Runjie Yuan

doi:10.1587/elex.21.20240434

LETTER

Single event effect mechanism study in 130nm fully depleted SOI technology devices

Rui Chen, Ziyu Wang, Sai Li, Jianwei Han, Yanan Liang, Qian Chen, Shipeng Shangguan, Runjie Yuan

著者情報

キーワード: silicon on insulator (SOI), single event transient (SET), Technical Computer Aided Design (TCAD), heavy ion, single event upset (SEU)

ジャーナルフリー

2024 年 21 巻 19 号 p. 20240434

DOI https://doi.org/10.1587/elex.21.20240434

Browse “Advance online publication” version

詳細

抄録

The Single-event Transient (SET) pulses triggered at the drain of NMOS with T-gate at various striking positions after heavy-ion striking are studied using Technical Computer Aided Design (TCAD) simulation based on the 130nm Fully Depleted Silicon on insulator (SOI) technology. Based on this technology, we design Flip-Flop chain circuits with different gate widths and gate lengths. The heavy ion irradiation experiment of the device is carried out.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）