Research on damage effects of pHEMT low noise amplifiers under HPM injection

Abstract

To investigate the damage patterns of AlGaAs/GaAs pHEMT transistors under High-Power Microwave (HPM) injection. A method for real-time monitoring of gain changes in AlGaAs/GaAs pHEMT chips at different injection powers has been proposed, which improves the accuracy of transistor damage threshold measurement. Subsequently, by fitting the damage threshold at different frequencies, it was found that the damage threshold of the device varied almost linearly in the high-frequency stage. This method has a certain value for studying the damage threshold of transistors under pulse action. Finally, AlGaAs/GaAs pHEMT chip was simulated using TCAD, and the dependence of the chip on different cap layer parameters was discussed.