Research on damage effects of pHEMT low noise amplifiers under HPM injection

Abstract

This work investigates the damage patterns of AlGaAs/GaAs pHEMT transistors under the injection of High-Power Microwave (HPM). Firstly, an HPM injection platform was established to implement a real-time monitoring method for the gain changes of AlGaAs/GaAs pHEMT chips under different injection powers. This method can accurately determine at what power the chip will be damaged. Then, the input-output relationship of the chip was studied, and the changes in S-parameters before and after HPM injection were tested. Subsequently, the relationship between the damage threshold of AlGaAs/GaAs pHEMT chips and the changes in pulse width and frequency was explored through experiments. By fitting the damage thresholds at different frequencies, it was found that in the highfrequency stage, the damage threshold of the device showed almost linear changes. Finally, a simulation model of the damage mechanism of AlGaAs/GaAs pHEMT was constructed, and the internal field, current density, and temperature distribution of pHEMT were analyzed through simulation.