2024 年 21 巻 3 号 p. 20230328
This letter presents a high-linearity single-pole five-throw switch implemented in a 0.13-µm silicon-on-insulator (SOI) CMOS process. In order to improve the linearity of switch, the uniform voltage division across the stacked-FETs is obtained by the proposed structure, which employs a resistive biasing network as well as compensation technology of drain-to-source capacitance and DC balance resistor. The measured input 0.1dB compression point of the proposed switch is 42dBm. Insertion losses are 0.38dB and 0.5dB for TX and RX modes at 0.9GHz. The switch exhibits a second harmonic of -91dBc, and third harmonic power of -84dBc with a +28dBm input power at 0.9GHz.
