A composite strain GeOI PMOSFET for 2.45G weak energy rectification

Abstract

There are a large number of 2.45G weak energy signals in the environment, which can be collected and realized for applications by microwave wireless energy transfer systems (WMPT). However, the rectification efficiency of WMPT with Si MOSFET as the core rectifier component is low at 2.45G weak energy density. In this paper, a high carrier mobility composite strain GeOI material is proposed and designed, and the optimal crystal orientation/crystal plane of the composite strain GeOI PMOSFET channel is optimized and determined by quantum mechanics related theory. The GeOI PMOSFET device is simulated and designed using Silvaco software, while a half-wave rectifier circuit with a load of 0.5 pf and 30 kΩ is built in the Mixed-mode module, and its peak rectification efficiency can reach 42.1% at 3.89 dBm. The rectification efficiency at -12.1 dBm 2.45G weak energy density reaches 6.5%, which is 3.96 times higher than that of the equivalent body Si MOSFET.