IEICE Electronics Express
Online ISSN : 1349-2543
LETTER
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate
Tetsuya SuemitsuYoshino K. FukaiMasami TokumitsuFabiana RampazzoGaudenzio MeneghessoEnrico Zanoni
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2006 Volume 3 Issue 13 Pages 310-315

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Abstract

We report two-step-recess gate InP HEMTs with a new process option suitable for producing a wide recess. In the new devices the gate recess is completely covered with a passivation film. Though the gate recess is extremely wide, a transconductance of 1S/mm and a cutoff frequency of 208GHz are achieved with 100-nm gate devices. Moreover, a huge improvement in the drain reliability is achieved by the wide recess which reduces hot-carrier-induced degradation, and by the full passivation which eliminates the instability related to the recess surface.

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© 2006 by The Institute of Electronics, Information and Communication Engineers
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