抄録
This paper presents a UHF rectifier structure to overcome the drawbacks of conventional rectifiers, which cannot simultaneously realize high power conversion efficiency (PCE) and arbitrarily high output voltage. In accordance with our clear analysis policy, a novel rectifier structure based on Dickson charge pump has been developed. Also, a single-stage rectifier circuit has been designed and fabricated in a standard 0.18-µm complementary metal oxide semiconductor (CMOS) process. Experimental results show that this rectifier can provide 1V voltage supply at a PCE of 32%, -30dBm incident RF power.
