Soft Pre-charge H/V Switch for Charge Pump with NAND Flash Memory using External Power

Youngil Kim; Sangsun Lee

doi:10.1587/elex.10.20130497

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Soft Pre-charge H/V Switch for Charge Pump with NAND Flash Memory using External Power

Youngil Kim, Sangsun Lee

著者情報

キーワード: Solid State Drive (SSD), NAND flash memory, Charge Pump, Boost Converter, Soft Start, High Voltage Switch

ジャーナルフリー早期公開

論文ID: 10.20130497

DOI https://doi.org/10.1587/elex.10.20130497

この記事には本公開記事があります。

The final version of this article is now available: Vol. 10 (2013), No. 17 pp. 20130497-20130497

詳細

抄録

This letter describes a soft pre-charge high voltage switch for a program/erase charge pump (P/E Pump) with NAND flash memory using an external high voltage of 12V. the use of a external high voltage reduces the P/E Pump stage and improves the power efficiency. The external high voltage is used as input power of the P/E Pump. The soft pre-charge high voltage switch is proposed to transfer the external high voltage without a breakdown issue. The proposed high voltage switch passes the external high voltage of +12V to be ramped up linearly at the start-up phase.

責任著者(Corresponding author)

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