4H-SiC JBSダイオードの逆方向特性に影響を与える表面欠陥の解析

抄録

The good relations between the reverse characteristics of 4H-SiC JBS diodes and the surface defects were obtained. The reverse characteristics of 4H-SiC JBS diodes were categorized in three groups as follows: (A) low blocking voltage, (B) high leakage current and (C) low leakage current. The groups of (A) and (B) were caused by the existences of the micropipe and small particles, and the carrot-like defects on the SiC surfaces, respectively. In group (C), there was no defect on the surfaces observed by the optical microscope. The structure of carrot-like defect was analyzed by the cathode-luminescence and TEM.