Micro-P構造適用による600V IGBTの高性能化

抄録

This paper describes the next generation 600V trench-gate IGBT utilizing the Micro-P structure to realize low noise and low power dissipation. We have achieved “better turn-on di/dt controllability”, “oscillation free turn-off” and “improved Von-Eoff trade-off relationship” in the 600V IGBTs. In a typical inverter operation, the new chip has realized 10% lower power dissipation and the temperature difference between junction and case (dT_j-c) can be reduced by 2.5deg. C.