抄録
InGaN green laser diodes (LDs) on semipolar {2021} GaN substrates with output powers of over 100mW in the spectral region beyond 530nm is demonstrated. Wall plug efficiencies as high as 7.0-8.9% are realized in the wavelength range of 525-532nm, which exceed those reported for c-plane LDs. The lifetime at a case temperature of 55°C was estimated to be over 5000 hours for an optical output power of 50mW. These results suggest that InGaN green LDs on the {2021} plane are better suited as light sources for applications requiring wavelengths over 525nm.
