抄録
Deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demanded for a wide variety of potential applications, such as sterilization, water and air purification, medical use, and so on. We have demonstrated 222-351nm AlGaN and quaternary InAlGaN-based DUV-LEDs by developing a low threading dislocation density (TDD) AlN crystal. We achieved an external quantum efficiency (EQE) of about 4% and an output power more than 30mW in DUV-LEDs for use in sterilization applications by developing new crystal growth techniques.
