抄録
Wall plug efficiency (WPE) of 830nm single mode LD is dramatically improved with AlGaInP material. Conventional near infrared LDs based on AlGaAs have poor temperature characteristics due to small energy gap in conduction band between a p-cladding layer and an active layer, resulting poor WPE at high temperature. An AlGaInP based LD is a most effective candidate for the excellent characteristics because of the large gap. A high power 830nm LD is newly designed based on AlGaInP. The LD shows excellent WPE around 40% at 400mW, CW output, 60°C case temperature. They also show very stable operation at the condition up to 1,100 hours.
