IEEJ Journal of Industry Applications
Online ISSN : 2187-1108
Print ISSN : 2187-1094
ISSN-L : 2187-1094

この記事には本公開記事があります。本公開記事を参照してください。
引用する場合も本公開記事を引用してください。

Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy
Takaya OzawaTakao YamamotoHiroto SugiuraYosuke Kondo
著者情報
ジャーナル フリー 早期公開

論文ID: 21009050

この記事には本公開記事があります。
詳細
抄録

In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar tran- sistor (IGBT) power devices under a short-circuit state. To determine the IGBT junction temperature, the transient thermal resistance of an IGBT device on the order of micro seconds is estimated by transient thermal simulations. The saturation current without self-heating effects is estimated based on a short-circuit test and the transient thermal resis- tance. The IGBT SPICE parameter is extracted from the saturation current characteristics during the short-circuit state. The coupled electrical-thermal simulations with the SPICE model and thermal resistance model are applied to several short-circuit evaluations with different parasitic impedance and gate driving condition, and the results are consistent with the measured current and voltage waveforms.

著者関連情報
© 2023 The Institute of Electrical Engineers of Japan
feedback
Top