抄録
We investigated a new measurement method of mechanical characteristics of thin films which are used as structural materials in MEMS devices. This on-chip tensile testing method is characterized by that the tensile specimen and loading mechanisms are integrated on a same silicon chip. We proved the accuracy of the stress and strain measurement by measuring Young's moduli of single-crystal silicon films having different crystallographic orientations. The measured Young's moduli showed good agreement with results from separately performed bending test and values in literature. Thus we concluded that the stress and strain measurement was correctly performed with our new method.
We developed a fabrication process of testing chip that allows tensile testing of single-crystal silicon film having arbitrary crystallographic orientations. The process starts with an SOI wafer whose top layer having a certain orientation was carefully aligned against the lower wafer. With three steps of etching, we fabricated test chips of 12×12×0.4mm, containing a specimen of 14_??_21μm thick, 80μm wide, and 400μm long.
