電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
マイクロ・アクチュエータのためのレーザーアブレーション法によるPZT薄膜の作製と評価
王 占杰林 文美前田 龍太郎
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2001 年 121 巻 3 号 p. 124-128

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Pb (Zr0.52Ti0.48)O3(PZT) thin films with thickness of 1.8-2.0μm were fabricated using laser ablation onto Pt/Ti/SiO2/Si substrate. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The PZT films with well-crystallized perovskite phase were obtained by 20% excess PbO to the target and annealing at 750°C for 90min. The remnant polarization and the coercive field of this film were 23.6μC/cm2 and 60.0kV/cm, while the dielectric constant and loss values measured at 1kHz were approximately 935 and 0.04, respectively. The device of micro scanning beams and micro mirrors were successfully fabricated through the PZT film deposition, lithography, electron cyclotron resonance (ECR), reactive ion etching (RIE) and inductively coupled plasma (ICP) releasing processes. The scanning performed by applying AC voltages at resonance frequencies to the actuating bimorph beams.
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