FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION

抄録

Metal contamination free Poly-Si TFT's could be fabricated on the glass substrate at 450℃ by Metal Induced Lateral Crystallization (MILC) method. The channel area was laterally crystallized from the source and drain areas, where the thin film of nickel was deposited in a self aligned manner. Electrical activation of the source and drain could be achieved by annealing at 450℃ after the ion mass doping of phosphorus. The N-channel TFTs showed the mobility of 〜53cm^2/Vs, and the on/off current ratio was higher than 10^6