ボディ効果よりスイッチトカレント技術を用いCMOS電圧リファレンス

抄録

A precise CMOS voltage reference using body effect and switched-current technique is presented in this paper. To reduce static current, the threshold voltage with body effect in nMOSFET transistor is utilized instead of the V_BE of BJT transistor. Owning to the switched-current technique, only one transistor is required to generate the reference voltage, so that the threshold voltage mismatch in conventional two-transistor configuration is eliminated. The output voltage is 147.44 mV, and the temperature coefficient is less than 5.2 ppm/degree ranging from -20 degree to 100 degree.