主催: 電気・情報関係学会九州支部連合大会委員会
会議名: 平成30年度電気・情報関係学会九州支部連合大会
回次: 71
開催地: 大分大学
開催日: 2018/09/27 - 2018/09/28
In recent years, researches on packaging of SiC devices have been actively conducted aiming at driving power converters such as power modules in a high temperature environment more than 200 ℃. However, in order to make full use of the high-temperature operability of the SiC device, packaging technique with higher heat resistance is indispensable. In this paper, we report the thermal degradation lifetime by measuring the transient thermal resistance and conducting the power cycle test at the maximum junction temperature 250 ℃ for the SiC power module using the high temperature solder joint.
