In recent years, SiC power modules capable of high speed operation have been studied for the realization of a low carbon society.Under high speed operation, surge voltages and currents resulting from stray elements in the power module exceed the rating of the power device and cause a failure. Therfore, in order to reduce the surge phenomenon, in this paper, we report the influence of stray capacitance on the dynamic characteristics of SiC SBD mounted in anti-parallel to the SiC MOSFET of 2 in 1 power module by comparing two different package structures.
