プラズマジェットCVD法によるダイヤモンド成膜面積の拡大
1992 年 58 巻 10 号 p. 1672-1678
詳細
1992 年 58 巻 10 号 p. 1672-1678
A direct current arc discharge plasma jet Chemical Vapor Depositon (CVD) method has achieved very high growth rates of diamond by spraying a plasma jet onto a water-cooled substrate. The initial, experimental scale diamond films thus synthesized on a substrate were small in area, less than 10 mm in diameter. A large area of diamond film formed with a high growth rate is presupposed to be required, but this only has partially been obtained. By rotating a tungsten, substrate during spraying, the area of diamond deposited on the substrate was observed to be about 4 times as large as that on a fixed tungsten substrate. Raman spectroscopy determined the diamond obtained by this method included a small quantity of amorphous carbon. However, diamond Raman spectra obtained from within the diamond indicated the diamond had a diameter of about 20 mm. More recently, a diamond film that has a diameter of about 30 mm has been obtained by rotating the substrate while moving it horizontally.
