抄録
In this study, we evaluated properties of Vibrating-Body Field Effect Transistor (VB-FET), which integrated MOSFET into MEMS oscillator, taking into account electro-mechanical interaction between gate and channel. Our modeling was started to express VB-FET as an equivalent circuit and then derived Lagrange's function and dissipation function of VB-FET from the equivalent circuit. From the modeling we calculated a transconductance and an output resistance of Coupled VB-FET and found that the value of the transconductance peak is increased up to 6 times and the output resistance of VB-FET is reduced by half at the resonance frequency. As described here, VB-FET has unique properties which offer new class of functions in MEMS.
