抄録
The results obtained so far show that the surface quality of silicon wafers ground by CMG (Chemo-Mechanical-Grinding) is equivalent to that of CMP (Chemical & Mechanical Polishing) wafers, in terms of surface roughness, dislocations, residual stress, oxides contaminations and crystallinarity. The objective of this study is to develop CMG wheels with higher performance. In order to optimize the contents of CMG wheel, the removal rate was investigated on the basis of four-factors ( the effect of shape, composition, agent and pore ) with two-level full factorial design of experiment.
