金属アシスト化学エッチングによる単結晶シリコンの3次元加工

抄録

We have developed a new etching technology for silicon substrates using Metal-Assisted Chemical Etching （MACE)． This new 3D etching method is a technology that can produce high-aspect 3D vertical structures by batch processing, simply by immersing a silicon substrate with a patterned porous catalyst film of gold or other material in a solution of hydrofluoric acid and hydrogen peroxide. It is expected to be applied to the processing of MEMS devices and other devices and will be a processing method with low environmental impact that will dramatically improve productivity. However, to achieve this, MACE has its own unique challenges that must be overcome, one of which is etching residue. In this paper, we have discussed about the unique partition-shaped silicon etching residue that caused by the breakage of the Au catalyst film. And counter measured using the pattern design. Finally, we have developed a high-aspect, three-dimensional etching method that leaves no etching residue by using this special pattern design, enabling the creation of new MEMS devices.