FIBドープ技術によるSiナノ構造体の作製と引張試験による機械物性評価

抄録

This paper describes the fabrication method of Silicon (Si) nanowires to evaluate the mechanical properties of Si, which is widely used as a based material in Micro Electro Mechanical System (MEMS). Nanoscale Si nanowires are fabricated by gallium (Ga) ion doping on monocrystalline silicon using Focus Ion Beam (FIB) and alkaline etching using Tetra methyl ammonium hydroxide (TMAH). In addition, fabricate Si nanowires with changed the various conditions of FIB ion dope and determine optimal conditions for fabricate Si nanowires.