抄録
Homogeneous nonequilibrium low temperature plasma was generated under atmospheric pressure by an RF (13.56MHz) excitation of He and O2 gases. Using this cold plasma, ZnO thin films were deposited on glass substrate exposed to air at room temperature by feeding Bis-Dipivaloylmethanato Zinc into the plasma with He carrier gas. Dependence of RF power and gap of electrodes on thickness and optical transmittance of the ZnO films were investigated. In addition, crystallinity and microstructure of the films was studied by XRD measurement and FE-SEM observation.
