抄録
The temperature dependence of the electrical resistivity of TaAl-N thin film was investigated and the characteristics of the thin film was applied to measure a pressure over a wide range in vacuum. The thin films, having been prepared by reacted DC magnetron sputtering method and deposited on the polyimide sheet, have characteristics that make them suitable for using as the thermo-conductive vacuum sensor; a large effective sensing area, a small heat capacity, and a large temperature coefficient of the resistivity (TCR) compared to a metal wire. The thin films was found sensitive to pressure change in the range of 10-4 to 105 Pa.
