抄録
The post UV-O3 treatment of as-deposited CVD-SiO2 film using Tetraethoxysilane gas was carried out to improve the dielectric properties of the film at lower temperature than 450°C. Application of highly-concentrated (>90 vol.%) ozone under irradiation of UV light (210nm<λ<450 nm) resulted in the improvement of the film properties including the dielectric constant, etching endurance against buffered HF, and insulating properties (leakage current through the film) for the process temperature as low as 100°C. Because these improvements were reduced at absence of either UV light or highly concentrated ozone, the diffusion of electronically excited oxygen atom generation by photodissociation of ozone into the film is considered to play a key role to the improvement of the film properties.
