抄録
Growth properties and electrical properties of Pr oxide films by an atomic layer deposition (ALD) technique using Pr(EtCp)3 are discussed in this paper. Slef-limiting growth of Pr oxide films at a rate of 0.07 nm/cycle and a thickness variation of less than 2% on 3-in. Si wafers were obtained. Polycrystalline cubic Pr2O3 films were grown on Si(001) substrates, while epitaxial growth of the cubic Pr2O3 film was found on a Si(111) substrate. Relatively fine capacitance-voltage curves were obtained for the Al/ALD-Pr oxide/Si(001) capacitors. The interface state density between the 130°C-grown ALD-Pr oxide film and the Si(001) substrate is about 1×1011 cm−2 eV−1. The dielectric constant of the ALD-Pr oxide film grown at 250°C was determined to be about 18, assuming that the dielectric constant of the interlayer is similar to that of SiO2.
