抄録
We describe recent progress of high-beam-quality high-power, namely high-brightness, photonic crystal
lasers. To realize such lasers, we develop unique double-lattice photonic crystal resonators, which are
used for generating stable fundamental-mode oscillation while suppressing unwanted higher-order-mode
oscillations, even in large areas (>500 μm). We successfully fabricate this unique structure by employing
air-hole retained crystal regrowth using metalorganic vapor phase epitaxy. A high output power of 10 W
with a high beam quality M2～2 is achieved with a large lasing area of 500 μm-diameter under pulse
operation. The brightness is found to be ～300 MWcm-2sr-1 which is the highest brightness of
semiconductor lasers ever reported. In addition, continuous wave operation with an output power of
～7 W is also successfully achieved from a single-chip.
