2016 年 4 巻 2 号 p. 109-115
A high QE and high readout speed ultraviolet-visible-near infrared (UV-VIS-NIR) light waveband linear photodiode array (PDA) is demonstrated in this paper. For the developed 1024 pixel PDA with the pixel size of 25 μmH × 2500 μmV, seven types of high transmittance optical layers were introduced for multiply divided pixel groups to achieve high QE for receiving light waveband and multiple transfer gates were placed along the long side of PD to improve readout speed. The fabricated PDA exhibited an average QE of 70 % for 200-800 nm and 80 % for 200-320 nm wavebands, the full well capacity (FWC) of over 70 pC and the line scan period of 0.33 msec simultaneously. The condition of top surface dopant concentration of the surface p+ layer of photodiode (PD) to prevent sensitivity degradation due to deuterium lamp irradiation was also clarified.
