抄録
A ferroelectric capacitor composed of Pb(Zr,Ti)O3 film is the main ferroelectric material used in FeRAM by many companies. FeRAM has many advantages over other non-volatile memories but basic understanding linking material properties in the capacitor and electrical properties has not been clarified. Controlling the film composition is key for preparing devices with high reliability. In this presentation results on sputtering of PZT films from ceramic targets containing excess Pb will be presented in order to clarify the sputtering mechanism and film composition impact on ferrelectric properties.
