抄録
Chemical mechanical polishing (CMP) is often employed to obtain supper smooth work-surface of silicon wafer. However, as CMP is a loose abrasive process, it is hard to achieve the high profile accuracy by CMP and lots of slurry must be supplied during CMP operations. As an alternative solution, a fixed abrasive CMP process offers better geometrical accuracy and discharges less waste disposal. In this paper, in order to enhance the polishing efficiency and improve the work-surface quality in fixed abrasive CMP, a novel ultrasonic assisted fixed abrasive CMP (UF-CMP) is proposed and the fundamental machining characteristics of the UF-CMP of silicon wafer is investigated experimentally. The results show that with the ultrasonic assistance, the material removal rate (MRR) is increased and the surface quality is improved.
