主催: 公益社団法人精密工学会
会議名: 2019年度精密工学会春季大会
開催地: 東京電機大学
開催日: 2019/03/13 - 2019/03/15
p. 548-549
SiC is a kind of promising semiconductor material, but it is difficult to realize high-precision and highly efficient polishing of SiC, owing to its high hardness and high chemical inertness. To obtain atomically smooth surface with high efficiency, we proposed ultrasonic assisted electrochemical mechanical polishing (UAECMP). In this study, effects of application of ultrasonic vibration and mass concentration of the NaCl aqueous electrolyte on the anodic oxidation rate of SiC substrate were investigated.