抄録
An experiment aimed at developing a high-speed X-ray diffraction method for in-situ measurements during molecular-beam epitaxy (MBE) growth was conducted. This method can be expected to be useful for understanding dislocation creation and structural relaxations in III-V semiconductors. A new X-ray optical system was tested for this purpose. The optical system consists of three optical elements, which together produce a convergent beam with a wide range of incident angles onto the sample. This makes it possible to observe the scattering distribution in a range of momentum transfer simultaneously with a single exposure of a two-dimensional detector, without any mechanical movement. The evaluation of the optical components confirmed that the principle of the new X-ray optics is sound. The diffracted X-rays from the Bragg peak of a thin film were observed simultaneously with the substrate Bragg peak. This shows the potential of the present method for time-resolved measurements during thin film growth, but some problems have to be solved for quantitative measurements.
