IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices
Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
Ryuichiro KAMIMURAKanji FURUTA
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2017 Volume E100.C Issue 2 Pages 150-155

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Abstract

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.

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© 2017 The Institute of Electronics, Information and Communication Engineers
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